FDD3690 Generic image

FDD3690

Part No
FDD3690
Manufacturer
onsemi
Description
Transistor, mosfet, n-Channel,100V V(Br)Dss,22A I(D),to-252Aa Rohs Compliant: Yes |Onsemi FDD3690
Datasheet
FDD3690
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 22 A
    Current Rating 22 A
    Drain to Source Breakdown Voltage 100 V
    Drain to Source Resistance 64 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Element Configuration Single
    Fall Time 10 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.514 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 60 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Tape & Reel
    Power Dissipation 1.6 W
    Rds On Max 64 mΩ
    Rise Time 6.5 ns
    Schedule B 8541290080
    Turn-Off Delay Time 29 ns
    Turn-On Delay Time 11 ns
    Voltage Rating (DC) 100 V
    Case/Package TO-252-3
    Mount Surface Mount
    Number of Terminals 2
    Weight 260.37 mg
    Height 2.517 mm
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