FDD4141 Generic image

FDD4141

Part No
FDD4141
Manufacturer
onsemi
Description
Transistor: P-MOSFET; unipolar; -40V; -50A; 12.3ohm; 69W; -55+175 deg.C; SMD; TO252(DPAK)
Datasheet
FDD4141
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 50 A
    Drain to Source Breakdown Voltage -40 V
    Drain to Source Resistance 12.3 mΩ
    Drain to Source Voltage (Vdss) -40 V
    Element Configuration Single
    Fall Time 15 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 2.775 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 69 W
    Min Breakdown Voltage 40 V
    Min Operating Temperature -55 °C
    Nominal Vgs -1.8 V
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 2.4 W
    Rds On Max 12.3 mΩ
    Resistance 12.3 MΩ
    Rise Time 7 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage -1.8 V
    Turn-Off Delay Time 38 ns
    Turn-On Delay Time 10 ns
    Case/Package TO-252
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
    Height 2.517 mm
    Length 6.73 mm
    Width 6.22 mm
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