FDD4N60NZ Generic image

FDD4N60NZ

Part No
FDD4N60NZ
Manufacturer
onsemi
Description
FDD4N60NZ Series 600 V 3.4 A 2.5 Ohm N-Channel UniFETTM 11 Mosfet - DPAK-3
Datasheet
FDD4N60NZ
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 3.4 A
    Drain to Source Breakdown Voltage 600 V
    Drain to Source Resistance 2.5 Ω
    Drain to Source Voltage (Vdss) 600 V
    Element Configuration Single
    Fall Time 12.8 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 510 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 114 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Tape & Reel (TR)
    Power Dissipation 114 W
    Rds On Max 2.5 Ω
    Rise Time 15.1 ns
    Turn-Off Delay Time 30.2 ns
    Turn-On Delay Time 12.7 ns
    Case/Package DPAK
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
    Height 2.517 mm
    Length 6.73 mm
    Width 6.22 mm
    added to cart View cart