FDC6506P Generic image

FDC6506P

Part No
FDC6506P
Manufacturer
onsemi
Description
Dual P-Channel PowerTrench® MOSFET, Logic Level, -30V, -1.8A, 170mΩ
Datasheet
FDC6506P
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 1.8 A
    Current Rating -1.8 A
    Drain to Source Breakdown Voltage -30 V
    Drain to Source Resistance 170 mΩ
    Drain to Source Voltage (Vdss) -30 V
    Dual Supply Voltage 30 V
    Element Configuration Dual
    Fall Time 8 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 190 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 960 mW
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Number of Channels 2
    Number of Elements 2
    Packaging Cut Tape
    Power Dissipation 700 mW
    Rds On Max 170 mΩ
    Resistance 170 MΩ
    Rise Time 8 ns
    Schedule B 8541210080
    Threshold Voltage -1.8 V
    Turn-Off Delay Time 14 ns
    Turn-On Delay Time 7 ns
    Voltage Rating (DC) -30 V
    Case/Package SOT-23-6
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Weight 36 mg
    Height 1.1 mm
    Length 3 mm
    Width 1.7 mm
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