FDD7N25LZTM Generic image

FDD7N25LZTM

Part No
FDD7N25LZTM
Manufacturer
onsemi
Description
N-Channel Power MOSFET, UniFETTM, 250V, 6.2A, 550mΩ, DPAK
Datasheet
FDD7N25LZTM
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 6.2 A
    Drain to Source Breakdown Voltage 250 V
    Drain to Source Resistance 570 mΩ
    Drain to Source Voltage (Vdss) 250 V
    Element Configuration Single
    Fall Time 30 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 635 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 56 W
    Min Breakdown Voltage 250 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 56 W
    Rds On Max 550 mΩ
    Resistance 550 MΩ
    Rise Time 15 ns
    Turn-Off Delay Time 75 ns
    Turn-On Delay Time 10 ns
    Case/Package DPAK
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
    Height 2.517 mm
    Length 6.73 mm
    Width 6.22 mm
    added to cart View cart