FDD8453LZ Generic image

FDD8453LZ

Part No
FDD8453LZ
Manufacturer
onsemi
Description
Power Trench® MOSFET, N-Channel, 40V, 50A, 6.7mΩ
Datasheet
FDD8453LZ
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 50 A
    Drain to Source Breakdown Voltage 40 V
    Drain to Source Resistance 10.6 mΩ
    Drain to Source Voltage (Vdss) 40 V
    Element Configuration Single
    Fall Time 5 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 3.515 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 65 W
    Min Breakdown Voltage 40 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 3.1 W
    Rds On Max 6.7 mΩ
    Resistance 6.7 MΩ
    Rise Time 6 ns
    Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 37 ns
    Turn-On Delay Time 11 ns
    Case/Package TO-252
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
    Height 2.517 mm
    Length 6.73 mm
    Width 6.22 mm
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