FDD8444 Generic image

FDD8444

Part No
FDD8444
Manufacturer
onsemi
Description
In a Pack of 2, N-Channel MOSFET, 145 A, 40 V, 3-Pin DPAK ON Semiconductor FDD8444
Datasheet
FDD8444
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 155 A
    Current 50 A
    Drain to Source Breakdown Voltage 40 V
    Drain to Source Resistance 5.2 Ω
    Drain to Source Voltage (Vdss) 40 V
    Dual Supply Voltage 40 V
    Element Configuration Single
    Fall Time 15 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 6.195 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 227 W
    Min Breakdown Voltage 40 V
    Min Operating Temperature -55 °C
    Nominal Vgs 2.5 V
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 153 W
    Rds On Max 5.2 mΩ
    Resistance 5.2 MΩ
    Reverse Recovery Time 51 ns
    Rise Time 78 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Termination SMD/SMT
    Threshold Voltage 2.5 V
    Turn-Off Delay Time 48 ns
    Turn-On Delay Time 12 ns
    Voltage 40 V
    Case/Package TO-252
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Height 2.517 mm
    Length 6.73 mm
    added to cart View cart