FDD4685 Generic image

FDD4685

Part No
FDD4685
Manufacturer
onsemi
Description
ON SEMICONDUCTOR - FDD4685 - MOSFET Transistor, P Channel, 8.4 mA, -40 V, 0.023 ohm, 10 V, 1.6 V
Datasheet
FDD4685
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 8.4 A
    Current Rating -8.4 A
    Drain to Source Breakdown Voltage -40 V
    Drain to Source Resistance 42 mΩ
    Drain to Source Voltage (Vdss) -40 V
    Dual Supply Voltage -40 V
    Element Configuration Single
    Fall Time 14 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 2.38 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 69 W
    Min Breakdown Voltage 40 V
    Min Operating Temperature -55 °C
    Nominal Vgs -1.6 V
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 69 W
    Rds On Max 27 mΩ
    Resistance 27 MΩ
    Rise Time 15 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Termination SMD/SMT
    Threshold Voltage -1.6 V
    Turn-Off Delay Time 34 ns
    Turn-On Delay Time 8 ns
    Voltage Rating (DC) -40 V
    Case/Package DPAK
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
    Height 2.517 mm
    Length 6.73 mm
    Width 6.22 mm
    added to cart View cart