FDC645N Generic image

FDC645N

Part No
FDC645N
Manufacturer
onsemi
Description
Dissipation Pd:1.6W; Power Dissipation Pd:1.6W; Pulse Current Idm:20A; SMD Marking:FDC645N; Termination Type:SMD; Uni / Bi Directional Polarity:N
Datasheet
FDC645N
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 5.5 mA
    Current Rating 5.5 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 30 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Dual Supply Voltage 30 V
    Element Configuration Single
    Fall Time 9 ns
    Gate to Source Voltage (Vgs) 12 V
    Input Capacitance 1.46 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 1.6 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Nominal Vgs 1.4 V
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 1.6 W
    Rds On Max 26 mΩ
    Resistance 26 MΩ
    Rise Time 9 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 1.4 V
    Turn-Off Delay Time 35 ns
    Turn-On Delay Time 8 ns
    Voltage Rating (DC) 30 V
    Case/Package SOT-23-6
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Weight 36 mg
    Height 1.1 mm
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