FDD6635 Generic image

FDD6635

Part No
FDD6635
Manufacturer
onsemi
Description
N-Channel PowerTrench® MOSFET, 35V, 59A, 10mΩ
Datasheet
FDD6635
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 15 A
    Drain to Source Breakdown Voltage 35 V
    Drain to Source Resistance 10 mΩ
    Drain to Source Voltage (Vdss) 35 V
    Element Configuration Single
    Fall Time 14 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.4 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 55 W
    Min Breakdown Voltage 35 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 3.8 W
    Rds On Max 10 mΩ
    Rise Time 6 ns
    Schedule B 8541290080
    Turn-Off Delay Time 28 ns
    Turn-On Delay Time 11 ns
    Case/Package TO-252
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
    Height 2.517 mm
    Length 6.73 mm
    Width 6.22 mm
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