FDD5N50NZFTM Generic image

FDD5N50NZFTM

Part No
FDD5N50NZFTM
Manufacturer
onsemi
Description
N-Channel Power MOSFET, UniFETTM II, FRFET®, 500 V, 3.7 A, 1.75 Ω, DPAK
Datasheet
FDD5N50NZFTM
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 3.7 A
    Drain to Source Breakdown Voltage 500 V
    Drain to Source Resistance 1.75 Ω
    Drain to Source Voltage (Vdss) 500 V
    Element Configuration Single
    Fall Time 22 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 485 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 62.5 W
    Min Breakdown Voltage 500 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 62.5 W
    Rds On Max 1.75 Ω
    Rise Time 19 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 31 ns
    Turn-On Delay Time 12 ns
    Case/Package DPAK
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
    Height 2.39 mm
    Length 6.73 mm
    Width 6.22 mm
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