SI4488DY-T1-E3 Generic image

SI4488DY-T1-E3

Part No
SI4488DY-T1-E3
Manufacturer
Vishay
Description
MOSFET; SOIC8 150V N-Channel Trench | Siliconix / Vishay SI4488DY-T1-E3
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 3.5 A
    Drain to Source Breakdown Voltage 150 V
    Drain to Source Resistance 50 mΩ
    Drain to Source Voltage (Vdss) 150 V
    Element Configuration Single
    Fall Time 7 ns
    Gate to Source Voltage (Vgs) 20 V
    Max Operating Temperature 150 °C
    Max Power Dissipation 1.56 W
    Min Breakdown Voltage 150 V
    Min Operating Temperature -55 °C
    Nominal Vgs 2 V
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 1.56 W
    Rds On Max 50 mΩ
    Resistance 50 mΩ
    Rise Time 7 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 2 V
    Turn-Off Delay Time 22 ns
    Turn-On Delay Time 12 ns
    Case/Package SO
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 506.605978 mg
    Height 1.5494 mm
    Length 4.9784 mm
    Width 3.9878 mm
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