SI4559ADY-T1-GE3 Generic image

SI4559ADY-T1-GE3

Part No
SI4559ADY-T1-GE3
Manufacturer
Vishay
Description
MOSFET N/P-CH 60V 5.3A 8-SOIC
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 4.3 A
    Drain to Source Breakdown Voltage 60 V
    Drain to Source Resistance 58 mΩ
    Drain to Source Voltage (Vdss) 60 V
    Fall Time 30 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 665 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 3.4 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Number of Channels 2
    Number of Elements 2
    Power Dissipation 2 W
    Rds On Max 58 mΩ
    Resistance 58 MΩ
    Rise Time 70 ns
    Turn-Off Delay Time 40 ns
    Turn-On Delay Time 30 ns
    Case/Package SO
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 506.605978 mg
    Height 1.75 mm
    Length 5 mm
    Width 4 mm
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