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SI4532CDY-T1-GE3

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Specification	Value
Continuous Drain Current (ID)	6 A
Drain to Source Breakdown Voltage	30 V
Drain to Source Resistance	47 mΩ
Drain to Source Voltage (Vdss)	30 V
Fall Time	7.7 ns
Gate to Source Voltage (Vgs)	20 V
Input Capacitance	305 pF
Max Junction Temperature (Tj)	150 °C
Max Operating Temperature	150 °C
Max Power Dissipation	2.78 W
Min Breakdown Voltage	30 V
Min Operating Temperature	-55 °C
Nominal Vgs	1 V
Number of Channels	2
Number of Elements	2
Packaging	Cut Tape
Rds On Max	47 mΩ
Resistance	89 mΩ
Rise Time	13 ns
Schedule B	8541290080
Threshold Voltage	1 V
Turn-Off Delay Time	17 ns
Turn-On Delay Time	5.5 ns
Case/Package	SOIC
Mount	Surface Mount
Number of Pins	8
Number of Terminals	8
Weight	186.993455 mg
Height	1.75 mm
Length	5 mm
Width	4 mm