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SI4491EDY-T1-GE3
- Part No
- SI4491EDY-T1-GE3
- Manufacturer
- Vishay
- Description
- P-Channel 30-V (D-S) Mosfet Rohs Compliant: Yes |Vishay SI4491EDY-T1-GE3
- Datasheet
- SI4491EDY-T1-GE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 17.3 A |
| Drain to Source Resistance | 6.5 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate to Source Voltage (Vgs) | 25 V |
| Input Capacitance | 4.62 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 6.9 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Packaging | Tape & Reel (TR) |
| Rds On Max | 6.5 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Case/Package | SOIC |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 8 |
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