SI4465ADY-T1-E3 Generic image

SI4465ADY-T1-E3

Part No
SI4465ADY-T1-E3
Manufacturer
Vishay
Description
Single P-Channel 8 V 0.009 Ohm Surface Mount Power Mosfet - SOIC-8
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 13.7 A
    Drain to Source Resistance 9 mΩ
    Drain to Source Voltage (Vdss) -8 V
    Element Configuration Single
    Fall Time 112 ns
    Gate to Source Voltage (Vgs) 8 V
    Max Operating Temperature 150 °C
    Max Power Dissipation 6.5 W
    Min Breakdown Voltage 8 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 3 W
    Rds On Max 9 mΩ
    Resistance 9 mΩ
    Rise Time 170 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage -450 mV
    Turn-Off Delay Time 168 ns
    Turn-On Delay Time 33 ns
    Case/Package SOIC
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 186.993455 mg
    Height 1.5 mm
    Length 5 mm
    Width 4 mm
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