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SI4435DDY-T1-GE3
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Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 8.1 A |
| Drain to Source Breakdown Voltage | -30 V |
| Drain to Source Resistance | 24 mΩ |
| Drain to Source Voltage (Vdss) | -30 V |
| Element Configuration | Single |
| Fall Time | 16 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 1.35 nF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 5 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 2.5 W |
| Rds On Max | 24 mΩ |
| Resistance | 24 MΩ |
| Rise Time | 35 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | -3 V |
| Turn-Off Delay Time | 45 ns |
| Turn-On Delay Time | 10 ns |
| Case/Package | SOIC |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 8 |
| Weight | 186.993455 mg |
| Height | 1.75 mm |
| Length | 5 mm |
| Width | 4 mm |
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