SI1025X-T1-GE3 Generic image

SI1025X-T1-GE3

Part No
SI1025X-T1-GE3
Manufacturer
Vishay
Description
Resistance Rds(On):4Ohm; Transistor Mounting:Surface Mount; No. Of Pins:6Pins Rohs Compliant: No |Vishay SI1025X-T1-GE3.
Datasheet
SI1025X-T1-GE3
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 190 mA
    Drain to Source Breakdown Voltage -60 V
    Drain to Source Resistance 4 Ω
    Element Configuration Dual
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 23 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 250 mW
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Number of Channels 2
    Number of Elements 2
    Packaging Digi-Reel®
    Power Dissipation 250 mW
    Rds On Max 4 Ω
    Resistance 4 Ω
    Schedule B 8541210080, 8541210080|8541210080, 8541210080|8541210080|8541210080, 8541210080|8541210080|8541210080|8541210080
    Threshold Voltage -2 V
    Case/Package SC
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Weight 32.006612 mg
    Height 600 µm
    Length 1.7 mm
    Width 1.2 mm
    added to cart View cart