Generic image
SI2333CDS-T1-E3
- Part No
- SI2333CDS-T1-E3
- Manufacturer
- Vishay
- Description
- TRANS MOSFET P-CH 12V 5.1A 3-PIN SOT-23 T/R | Siliconix / Vishay SI2333CDS-T1-E3
- Datasheet
- SI2333CDS-T1-E3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 7.1 A |
| Drain to Source Breakdown Voltage | -12 V |
| Drain to Source Resistance | 35 mΩ |
| Drain to Source Voltage (Vdss) | 12 V |
| Element Configuration | Single |
| Fall Time | 35 ns |
| Gate to Source Voltage (Vgs) | 8 V |
| Input Capacitance | 1.225 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 2.5 W |
| Min Breakdown Voltage | 12 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 1.25 W |
| Rds On Max | 35 mΩ |
| Resistance | 35 mΩ |
| Rise Time | 35 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | -400 mV |
| Turn-Off Delay Time | 45 ns |
| Turn-On Delay Time | 13 ns |
| Case/Package | SOT-23-3 |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 1.437803 g |
| Height | 1.016 mm |
| Length | 3.0226 mm |
| Width | 1.397 mm |
added to cart
View cart
Related Products