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SI2365EDS-T1-GE3
- Part No
- SI2365EDS-T1-GE3
- Manufacturer
- Vishay
- Description
- Power MOSFET, P Channel, 20 V, 5.9 A, 0.0265 ohm, SOT-23, Surface Mount
- Datasheet
- SI2365EDS-T1-GE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 5.9 A |
| Drain to Source Breakdown Voltage | -20 V |
| Drain to Source Resistance | 41 mΩ |
| Drain to Source Voltage (Vdss) | -20 V |
| Element Configuration | Single |
| Fall Time | 21 µs |
| Gate to Source Voltage (Vgs) | 8 V |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 1.7 W |
| Min Breakdown Voltage | 20 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 1 W |
| Rds On Max | 32 mΩ |
| Rise Time | 32 µs |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | -1 V |
| Turn-Off Delay Time | 65 ns |
| Turn-On Delay Time | 9 ns |
| Case/Package | SOT-23 |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 1.437803 g |
| Height | 1.12 mm |
| Length | 3.04 mm |
| Width | 1.4 mm |
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