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SI2338DS-T1-GE3
- Part No
- SI2338DS-T1-GE3
- Manufacturer
- Vishay
- Description
- Si2338DS-T1-GE3 N-channel MOSFET Transistor, 6 A, 30 V, 3-Pin SOT-23 | Siliconix / Vishay SI2338DS-T1-GE3
- Datasheet
- SI2338DS-T1-GE3
- Test Report
- Available
- Samples
- Available
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- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 6 A |
| Drain to Source Breakdown Voltage | 30 V |
| Drain to Source Resistance | 28 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Element Configuration | Single |
| Fall Time | 7 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 424 pF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 2.5 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 1.3 W |
| Rds On Max | 28 mΩ |
| Rise Time | 11 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | 2.5 V |
| Turn-Off Delay Time | 20 ns |
| Turn-On Delay Time | 3 ns |
| Case/Package | SOT-23-3 |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 1.437803 g |
| Height | 1.12 mm |
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