SI2337DS-T1-GE3 Generic image

SI2337DS-T1-GE3

Part No
SI2337DS-T1-GE3
Manufacturer
Vishay
Description
In a Pack of 20, P-Channel MOSFET, 1.75 A, 80 V, 3-Pin SOT-23 Vishay SI2337DS-T1-GE3
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 1.2 mA
    Drain to Source Breakdown Voltage -80 V
    Drain to Source Resistance 270 mΩ
    Drain to Source Voltage (Vdss) -80 V
    Element Configuration Single
    Fall Time 12 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 500 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.5 W
    Min Breakdown Voltage 80 V
    Min Operating Temperature -55 °C
    Nominal Vgs -4 V
    Number of Channels 1
    Number of Elements 1
    Packaging Digi-Reel®
    Power Dissipation 760 mW
    Rds On Max 270 mΩ
    Resistance 270 MΩ
    Rise Time 18 ns
    Schedule B 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
    Threshold Voltage -4 V
    Turn-Off Delay Time 20 ns
    Turn-On Delay Time 10 ns
    Case/Package SOT-23-3
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 3
    Weight 1.437803 g
    Height 1.12 mm
    Length 3.04 mm
    Width 1.4 mm
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