SI2333CDS-T1-GE3 Generic image

SI2333CDS-T1-GE3

Part No
SI2333CDS-T1-GE3
Manufacturer
Vishay
Description
; Gate Source Threshold Voltage Max:1V; Power Dissipation:2.5W; No. Of Pins:3Pins Rohs Compliant: No |Vishay SI2333CDS-T1-GE3.
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 7.1 A
    Current 71 A
    Drain to Source Breakdown Voltage -12 V
    Drain to Source Resistance 35 mΩ
    Drain to Source Voltage (Vdss) -12 V
    Element Configuration Single
    Fall Time 35 ns
    Gate to Source Voltage (Vgs) 8 V
    Input Capacitance 1.225 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.5 W
    Min Breakdown Voltage 12 V
    Min Operating Temperature -55 °C
    Nominal Vgs -1 V
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 1.25 W
    Rds On Max 35 mΩ
    Resistance 35 mΩ
    Rise Time 35 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage -400 mV
    Turn-Off Delay Time 45 ns
    Turn-On Delay Time 13 ns
    Voltage 12 V
    Case/Package SOT-23
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 3
    Weight 1.437803 g
    Height 1.12 mm
    Length 3.04 mm
    Width 1.4 mm
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