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SI2315BDS-T1-E3
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Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 3 A |
| Current | 3 A |
| Drain to Source Breakdown Voltage | -12 V |
| Drain to Source Resistance | 50 mΩ |
| Drain to Source Voltage (Vdss) | -12 V |
| Dual Supply Voltage | -12 V |
| Element Configuration | Single |
| Fall Time | 35 ns |
| Gate to Source Voltage (Vgs) | 8 V |
| Input Capacitance | 715 pF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 750 mW |
| Min Breakdown Voltage | 12 V |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | -900 mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 750 mW |
| Rds On Max | 50 mΩ |
| Resistance | 50 mΩ |
| Rise Time | 35 ns |
| Schedule B | 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080 |
| Termination | SMD/SMT |
| Threshold Voltage | -900 mV |
| Turn-Off Delay Time | 50 ns |
| Turn-On Delay Time | 15 ns |
| Voltage | 12 V |
| Case/Package | SOT-23 |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 1.437803 g |
| Height | 1.12 mm |
| Length | 3.04 mm |
| Width | 1.4 mm |
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