SI2377EDS-T1-GE3 Generic image

SI2377EDS-T1-GE3

Part No
SI2377EDS-T1-GE3
Manufacturer
Vishay
Description
Trans Mosfet P-ch 20V 4.4A 3-PIN SOT-23 T/r / Mosfet P-ch 20V 4.4A SOT-23
Datasheet
SI2377EDS-T1-GE3
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 4.4 A
    Drain to Source Breakdown Voltage -20 V
    Drain to Source Resistance 61 mΩ
    Drain to Source Voltage (Vdss) -20 V
    Element Configuration Single
    Gate to Source Voltage (Vgs) 8 V
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 1.8 W
    Min Breakdown Voltage 20 V
    Min Operating Temperature -55 °C
    Nominal Vgs -400 mV
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 1.25 W
    Rds On Max 61 mΩ
    Resistance 61 MΩ
    Schedule B 8541290080
    Threshold Voltage -400 mV
    Turn-Off Delay Time 4 ns
    Turn-On Delay Time 90 ps
    Case/Package SOT-23
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 3
    Weight 1.437803 g
    Height 1.12 mm
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