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SI3424CDV-T1-GE3
- Part No
- SI3424CDV-T1-GE3
- Manufacturer
- Vishay
- Description
- N-Channel 30-V (D-S) Mosfet Rohs Compliant: Yes |Vishay SI3424CDV-T1-GE3
- Datasheet
- SI3424CDV-T1-GE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 8 A |
| Drain to Source Breakdown Voltage | 30 V |
| Drain to Source Resistance | 26 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Element Configuration | Single |
| Fall Time | 8 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 405 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 3.6 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 2 W |
| Rds On Max | 26 mΩ |
| Rise Time | 12 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 16 ns |
| Turn-On Delay Time | 3 ns |
| Case/Package | TSOP |
| Mount | Surface Mount |
| Number of Pins | 6 |
| Number of Terminals | 6 |
| Weight | 19.986414 mg |
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