FDY1002PZ Generic image

FDY1002PZ

Part No
FDY1002PZ
Manufacturer
onsemi
Description
Dual P-Channel PowerTrench® MOSFET, (-1.5 V) Specified, -20V, -0.83A, 0.5Ω
Datasheet
FDY1002PZ
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) -830 mA
    Drain to Source Breakdown Voltage -20 V
    Drain to Source Resistance 1.8 Ω
    Drain to Source Voltage (Vdss) -20 V
    Element Configuration Dual
    Fall Time 2.9 ns
    Gate to Source Voltage (Vgs) 8 V
    Input Capacitance 135 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 625 mW
    Min Breakdown Voltage -20 V
    Min Operating Temperature -55 °C
    Number of Channels 2
    Number of Elements 2
    Power Dissipation 446 mW
    Rds On Max 500 mΩ
    Resistance 500 mΩ
    Rise Time 2.9 ns
    Schedule B 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|85
    Turn-Off Delay Time 23 ns
    Turn-On Delay Time 3.5 ns
    Case/Package SOT-563
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Weight 32 mg
    Height 700 µm
    Length 1.7 mm
    Width 1.2 mm
    added to cart View cart