FDMD86100 Generic image

FDMD86100

Part No
FDMD86100
Manufacturer
onsemi
Description
Dual N-Channel Shielded Gate PowerTrench® MOSFET 100V, 39A, 10.5mΩ
Datasheet
FDMD86100
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 39 A
    Drain to Source Resistance 10.5 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Element Configuration Dual
    Input Capacitance 2.06 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 33 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Number of Elements 2
    Rds On Max 10.5 mΩ
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 97.95918 mg
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