FDMC8882 Generic image

FDMC8882

Part No
FDMC8882
Manufacturer
onsemi
Description
N-Channel Power Trench® MOSFET 30V, 16A, 14.3mΩ
Datasheet
FDMC8882
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 10.5 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 14.3 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Element Configuration Single
    Fall Time 2 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 945 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 18 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Nominal Vgs 1.9 V
    Number of Channels 1
    Number of Elements 1
    Packaging Tape & Reel (TR)
    Power Dissipation 2.3 W
    Rds On Max 14.3 mΩ
    Resistance 14.3 MΩ
    Rise Time 3 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 1.9 V
    Turn-Off Delay Time 17 ns
    Turn-On Delay Time 7 ns
    Case/Package 0124
    Contact Plating Gold
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 5
    Weight 200 mg
    Height 800 µm
    Length 3.3 mm
    Width 3.3 mm
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