FDMD85100 Generic image

FDMD85100

Part No
FDMD85100
Manufacturer
onsemi
Description
Transistor MOSFET Array Dual N-CH 100V 48A 8-Pin PQFN T/R
Datasheet
FDMD85100
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 48 A
    Drain to Source Breakdown Voltage 100 V
    Drain to Source Resistance 9.9 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 2.23 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 50 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Number of Channels 2
    Number of Elements 2
    Power Dissipation 2.2 W
    Rds On Max 9.9 mΩ
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 94.85095 mg
    Height 800 µm
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