FDMD8580 Generic image

FDMD8580

Part No
FDMD8580
Manufacturer
onsemi
Description
Dual N-Channel PowerTrench® MOSFET 80V, 82A, 4.6mΩ
Datasheet
FDMD8580
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 82 A
    Drain to Source Breakdown Voltage 80 V
    Drain to Source Resistance 4.6 mΩ
    Drain to Source Voltage (Vdss) 80 V
    Element Configuration Dual
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 5.875 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 59 W
    Min Breakdown Voltage 80 V
    Min Operating Temperature -55 °C
    Number of Channels 2
    Number of Elements 2
    Power Dissipation 2.3 W
    Rds On Max 4.6 mΩ
    Schedule B 8541290080
    Turn-Off Delay Time 31 ns
    Turn-On Delay Time 25 ns
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 94.85095 mg
    Height 800 µm
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