FDMD8680 Generic image

FDMD8680

Part No
FDMD8680
Manufacturer
onsemi
Description
Dual N-Channel PowerTrench® MOSFET 60V, 66A, 4.7mΩ
Datasheet
FDMD8680
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 66 A
    Drain to Source Breakdown Voltage 80 V
    Drain to Source Resistance 4.7 mΩ
    Drain to Source Voltage (Vdss) 80 V
    Element Configuration Dual
    Gate to Source Voltage (Vgs) 20 V
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 39 W
    Min Breakdown Voltage 80 V
    Min Operating Temperature -55 °C
    Number of Channels 2
    Number of Elements 2
    Power Dissipation 2.3 W
    Schedule B 8541290080|8541290080
    Threshold Voltage 3 V
    Turn-Off Delay Time 30 ns
    Turn-On Delay Time 20 ns
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 97.95918 mg
    Height 800 µm
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