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FGY75N60SMD
- Part No
- FGY75N60SMD
- Manufacturer
- onsemi
- Description
- Trans IGBT Chip N-CH 600V 150A 750000mW 3-Pin Power-247 Tube / IGBT 600V 150A 750W POWER-247
- Datasheet
- FGY75N60SMD
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Emitter Breakdown Voltage | 600 V |
| Collector Emitter Saturation Voltage | 1.9 V |
| Collector Emitter Voltage (VCEO) | 600 V |
| Continuous Collector Current | 150 A |
| Element Configuration | Single |
| Fall Time | 29 ns |
| Max Collector Current | 150 A |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 750 W |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Packaging | Tape & Reel (TR) |
| Power Dissipation | 750 mW |
| Reverse Recovery Time | 55 ns |
| Rise Time | 73 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85 |
| Turn-Off Delay Time | 136 ns |
| Turn-On Delay Time | 24 ns |
| Case/Package | TO-247-3 |
| Mount | Through Hole |
| Number of Terminals | 3 |
| Weight | 7.629 g |
| Height | 24.75 mm |
| Length | 15.87 mm |
| Width | 4.82 mm |
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