FDZ663P Generic image

FDZ663P

Part No
FDZ663P
Manufacturer
onsemi
Description
-20V P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
Datasheet
FDZ663P
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 2.7 A
    Drain to Source Breakdown Voltage -20 V
    Drain to Source Resistance 134 mΩ
    Drain to Source Voltage (Vdss) 20 V
    Element Configuration Single
    Fall Time 32 ns
    Gate to Source Voltage (Vgs) 8 V
    Input Capacitance 525 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 1.3 W
    Min Breakdown Voltage 20 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 1.3 W
    Rds On Max 134 mΩ
    Rise Time 6.2 ns
    Turn-Off Delay Time 67 ns
    Turn-On Delay Time 4.8 ns
    Mount Surface Mount
    Number of Pins 4
    Number of Terminals 4
    Weight 67 mg
    Height 150 µm
    Length 800 µm
    Width 800 µm
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