FDV301N Generic image

FDV301N

Part No
FDV301N
Manufacturer
onsemi
Description
Transistor MOSFET N-Ch. 25V 220mA 0,35W 4Ohm SOT23 FDV301N
Datasheet
FDV301N
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 220 mA
    Current 2 A
    Current Rating 220 mA
    Drain to Source Breakdown Voltage 25 V
    Drain to Source Resistance 5 Ω
    Drain to Source Voltage (Vdss) 25 V
    Dual Supply Voltage 25 V
    Element Configuration Single
    Fall Time 6 ns
    Gate to Source Voltage (Vgs) 8 V
    Input Capacitance 9.5 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 350 mW
    Manufacturer Package Identifier SOT−23 (TO−236) CASE 318−08 ISSUE AR
    Min Breakdown Voltage 25 V
    Min Operating Temperature -55 °C
    Nominal Vgs 850 mV
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 350 mW
    Rds On Max 4 Ω
    Resistance 4 Ω
    Rise Time 6 ns
    Schedule B 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|85
    Termination SMD/SMT
    Turn-Off Delay Time 3.5 ns
    Turn-On Delay Time 3.2 ns
    Voltage 50 V
    Voltage Rating (DC) 25 V
    Case/Package SOT-23
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 3
    Height 1.11 mm
    Length 2.92 mm
    Width 3.05 mm
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