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FDMD8240LET40
- Part No
- FDMD8240LET40
- Manufacturer
- onsemi
- Description
- Transistor MOSFET Array Dual N-CH 40V 103A 12-Pin PQFN T/R
- Datasheet
- FDMD8240LET40
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 103 A |
| Drain to Source Breakdown Voltage | 40 V |
| Drain to Source Resistance | 2.6 mΩ |
| Drain to Source Voltage (Vdss) | 40 V |
| Element Configuration | Dual |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 4.23 nF |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 50 W |
| Min Breakdown Voltage | 40 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Power Dissipation | 2.5 W |
| Rds On Max | 2.6 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | 2 V |
| Turn-Off Delay Time | 36 ns |
| Turn-On Delay Time | 12 ns |
| Mount | Surface Mount |
| Number of Pins | 12 |
| Number of Terminals | 12 |
| Weight | 82.3188 mg |
| Height | 800 µm |
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