FDT86113LZ Generic image

FDT86113LZ

Part No
FDT86113LZ
Manufacturer
onsemi
Description
Trans Mosfet N-ch 100V 3.3A 4-PIN(3+TAB) SOT-223 T/r / Mosfet N-ch 100V 3.3A SOT223
Datasheet
FDT86113LZ
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 3.3 A
    Drain to Source Breakdown Voltage 100 V
    Drain to Source Resistance 100 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Element Configuration Single
    Fall Time 1.5 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 315 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.2 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 1 W
    Rds On Max 100 mΩ
    Rise Time 1.3 ns
    Schedule B 8541290080
    Threshold Voltage 1.7 V
    Turn-Off Delay Time 10 ns
    Turn-On Delay Time 3.8 ns
    Case/Package SOT-223-4
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 4
    Number of Terminals 4
    Weight 250.2 mg
    Height 1.8 mm
    Length 3.7 mm
    Width 6.7 mm
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