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FDMD8260LET60
- Part No
- FDMD8260LET60
- Manufacturer
- onsemi
- Description
- Dual N-Channel Power Trench® MOSFET 60V, 5.8mΩ
- Datasheet
- FDMD8260LET60
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 67 A |
| Drain to Source Resistance | 5.8 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| Element Configuration | Dual |
| Input Capacitance | 5.245 nF |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 44 W |
| Min Breakdown Voltage | 60 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 2 |
| Rds On Max | 5.8 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Mount | Surface Mount |
| Number of Pins | 12 |
| Number of Terminals | 12 |
| Weight | 82.3188 mg |
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