FDMD84100 Generic image

FDMD84100

Part No
FDMD84100
Manufacturer
onsemi
Description
Dual N-Channel PowerTrench® MOSFET 100V, 21A, 20mΩ
Datasheet
FDMD84100
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 7 A
    Drain to Source Breakdown Voltage 100 V
    Drain to Source Resistance 20 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Element Configuration Dual
    Fall Time 2.8 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 980 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 23 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Number of Channels 2
    Number of Elements 2
    Power Dissipation 2.1 W
    Rds On Max 20 mΩ
    Rise Time 2.6 ns
    Schedule B 8541290080
    Turn-Off Delay Time 14 ns
    Turn-On Delay Time 8.4 ns
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 153.4014 mg
    Height 800 µm
    Length 5.1 mm
    Width 3.4 mm
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