FDMD8260L Generic image

FDMD8260L

Part No
FDMD8260L
Manufacturer
onsemi
Description
Small Signal Field-Effect Transistor, 64A I(D), N-Channel, Metal-oxide Semiconductor FET
Datasheet
FDMD8260L
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 64 A
    Drain to Source Breakdown Voltage 60 V
    Drain to Source Resistance 5.8 mΩ
    Drain to Source Voltage (Vdss) 60 V
    Element Configuration Dual
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 5.245 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 37 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Number of Channels 2
    Number of Elements 2
    Power Dissipation 1 W
    Rds On Max 5.8 mΩ
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 47 ns
    Turn-On Delay Time 12 ns
    Mount Surface Mount
    Number of Pins 12
    Number of Terminals 12
    Weight 82.3188 mg
    Height 800 µm
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