FDMD8280 Generic image

FDMD8280

Part No
FDMD8280
Manufacturer
onsemi
Description
Dual N-Channel Power Trench® MOSFET 80V, 40A, 8.2mΩ
Datasheet
FDMD8280
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 11 A
    Drain to Source Breakdown Voltage 80 V
    Drain to Source Resistance 8.2 mΩ
    Drain to Source Voltage (Vdss) 80 V
    Element Configuration Dual
    Fall Time 8.9 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 3.05 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 1 W
    Min Breakdown Voltage 80 V
    Min Operating Temperature -55 °C
    Number of Channels 2
    Number of Elements 2
    Packaging Tape & Reel (TR)
    Power Dissipation 2.1 W
    Rds On Max 8.2 mΩ
    Rise Time 12 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 26 ns
    Turn-On Delay Time 15 ns
    Case/Package DFN
    Mount Surface Mount
    Number of Pins 12
    Number of Terminals 12
    Weight 82.3188 mg
    Height 800 µm
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