FDU3N40TU Generic image

FDU3N40TU

Part No
FDU3N40TU
Manufacturer
onsemi
Description
N-Channel Power MOSFET, UniFETTM, 400V, 2A, 3.4Ω, IPAK
Datasheet
FDU3N40TU
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 2 A
    Drain to Source Breakdown Voltage 400 V
    Drain to Source Resistance 3.4 Ω
    Drain to Source Voltage (Vdss) 400 V
    Element Configuration Single
    Fall Time 25 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 225 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 30 W
    Min Breakdown Voltage 400 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Packaging Bulk
    Power Dissipation 30 W
    Rds On Max 3.4 Ω
    Resistance 3.4 Ω
    Rise Time 30 ns
    Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 10 ns
    Turn-On Delay Time 10 ns
    Case/Package TO-251-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 343.08 mg
    Height 7.57 mm
    Length 6.8 mm
    Width 2.5 mm
    added to cart View cart