FDU6N50TU Generic image

FDU6N50TU

Part No
FDU6N50TU
Manufacturer
onsemi
Description
N-Channel Power MOSFET, UniFETTM, 500 V, 6 A, 900 mΩ, IPAK
Datasheet
FDU6N50TU
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 6 A
    Drain to Source Breakdown Voltage 500 V
    Drain to Source Resistance 900 mΩ
    Drain to Source Voltage (Vdss) 500 V
    Element Configuration Single
    Fall Time 35 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 940 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 89 W
    Min Breakdown Voltage 500 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 89 W
    Rds On Max 900 mΩ
    Rise Time 55 ns
    Turn-Off Delay Time 25 ns
    Turn-On Delay Time 6 ns
    Case/Package TO-251-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 343.08 mg
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