FDS6982AS Generic image

FDS6982AS

Part No
FDS6982AS
Manufacturer
onsemi
Description
ON SEMICONDUCTOR - FDS6982AS - Dual MOSFET, Dual N Channel, 8.6 A, 30 V, 0.011 ohm, 10 V, 1.4 V
Datasheet
FDS6982AS
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 8.6 A
    Current Rating 8.6 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 13.5 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Fall Time 3 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 610 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Nominal Vgs 1.4 V
    Number of Channels 2
    Number of Elements 2
    Packaging Cut Tape
    Power Dissipation 2 W
    Rds On Max 28 mΩ
    Recovery Time 19 ns
    Resistance 28 MΩ
    Rise Time 7 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 1.9 V
    Turn-Off Delay Time 24 ns
    Turn-On Delay Time 12 ns
    Voltage Rating (DC) 30 V
    Case/Package SOIC
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 187 mg
    Height 1.75 mm
    Length 5 mm
    Width 3.99 mm
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