FDS6875 Generic image

FDS6875

Part No
FDS6875
Manufacturer
onsemi
Description
Dual P-Channel PowerTrench™ MOSFET, 2.5V Specified, -20V, -6A, 30mΩ
Datasheet
FDS6875
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 6 A
    Current Rating -6 A
    Drain to Source Breakdown Voltage -20 V
    Drain to Source Resistance 30 mΩ
    Drain to Source Voltage (Vdss) -20 V
    Element Configuration Dual
    Fall Time 35 ns
    Gate to Source Voltage (Vgs) 8 V
    Input Capacitance 2.25 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2 W
    Min Breakdown Voltage 20 V
    Min Operating Temperature -55 °C
    Number of Channels 2
    Number of Elements 2
    Packaging Cut Tape
    Power Dissipation 2 W
    Rds On Max 30 mΩ
    Resistance 30 mΩ
    Rise Time 15 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage -800 mV
    Turn-Off Delay Time 98 ns
    Turn-On Delay Time 8 ns
    Voltage Rating (DC) -20 V
    Case/Package SOIC
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 187 mg
    Height 1.75 mm
    Length 5 mm
    Width 4 mm
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