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FDS6984AS

Part No: FDS6984AS
Manufacturer: onsemi
Description: MOSFET Transistor, Dual N Channel + Schottky, 8.5 A, 30 V, 0.017 ohm, 10 V, 1.7 V
Datasheet: FDS6984AS
Test Report: Available
Samples: Available

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Specification	Value
Continuous Drain Current (ID)	5.5 A
Drain to Source Breakdown Voltage	30 V
Drain to Source Resistance	20 mΩ
Drain to Source Voltage (Vdss)	30 V
Fall Time	2 ns
Gate to Source Voltage (Vgs)	20 V
Input Capacitance	185 pF
Max Operating Temperature	150 °C
Max Power Dissipation	2 W
Min Breakdown Voltage	30 V
Min Operating Temperature	-55 °C
Number of Elements	2
Power Dissipation	2 W
Rds On Max	130 mΩ
Resistance	32 MΩ
Rise Time	6 ns
Schedule B	8541290080, 8541290080\|8541290080\|8541290080\|8541290080\|8541290080
Threshold Voltage	1.7 V
Turn-Off Delay Time	22 ns
Case/Package	SOIC
Contact Plating	Tin
Mount	Surface Mount
Number of Pins	8
Number of Terminals	8
Weight	187 mg
Height	1.5 mm
Length	5 mm
Width	3.99 mm