FDS2670 Generic image

FDS2670

Part No
FDS2670
Manufacturer
onsemi
Description
Single N-Channel 200 V 275 mOhm 43 nC 2.5 W PowerTrench SMT Mosfet - SOIC-8
Datasheet
FDS2670
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 3 A
    Current Rating 3 A
    Drain to Source Breakdown Voltage 200 V
    Drain to Source Resistance 130 mΩ
    Drain to Source Voltage (Vdss) 200 V
    Element Configuration Single
    Fall Time 25 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.228 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.5 W
    Min Breakdown Voltage 200 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Tape & Reel
    Power Dissipation 2.5 W
    Rds On Max 130 mΩ
    Resistance 130 MΩ
    Rise Time 8 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 30 ns
    Turn-On Delay Time 13 ns
    Voltage Rating (DC) 200 V
    Case/Package SOIC
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 130 mg
    Height 1.75 mm
    Length 5 mm
    Width 4 mm
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