FDS4465 Generic image

FDS4465

Part No
FDS4465
Manufacturer
onsemi
Description
In a Pack of 5, FDS4465 P-Channel MOSFET, 13.5 A, 20 V, 8-Pin SOIC ON Semiconductor
Datasheet
FDS4465
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 13.5 A
    Current Rating -13.5 A
    Drain to Source Breakdown Voltage -20 V
    Drain to Source Resistance 8.5 mΩ
    Drain to Source Voltage (Vdss) -20 V
    Dual Supply Voltage -20 V
    Element Configuration Single
    Fall Time 140 ns
    Gate to Source Voltage (Vgs) 8 V
    Input Capacitance 8.237 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 2.5 W
    Min Breakdown Voltage 20 V
    Min Operating Temperature -55 °C
    Nominal Vgs -600 mV
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 1.2 W
    Rds On Max 8.5 mΩ
    Resistance 8.5 MΩ
    Rise Time 24 ns
    Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
    Termination SMD/SMT
    Threshold Voltage -600 mV
    Turn-Off Delay Time 300 ns
    Turn-On Delay Time 20 ns
    Voltage Rating (DC) -20 V
    Case/Package SOIC
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 130 mg
    Height 1.75 mm
    Length 5 mm
    Width 4 mm
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