FDS6912A Generic image

FDS6912A

Part No
FDS6912A
Manufacturer
onsemi
Description
Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 6A, 28mΩ
Datasheet
FDS6912A
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 6 A
    Current Rating 6 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 28 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Dual Supply Voltage 30 V
    Element Configuration Dual
    Fall Time 5 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 575 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Number of Channels 2
    Number of Elements 2
    Packaging Cut Tape
    Power Dissipation 1.6 W
    Rds On Max 28 mΩ
    Resistance 28 MΩ
    Rise Time 5 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Termination SMD/SMT
    Threshold Voltage 1.9 V
    Turn-Off Delay Time 23 ns
    Turn-On Delay Time 8 ns
    Voltage Rating (DC) 30 V
    Case/Package SOIC
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 187 mg
    Height 1.75 mm
    Length 5 mm
    Width 4 mm
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