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FDS6990AS

Part No: FDS6990AS
Manufacturer: onsemi
Description: The FDS6990AS is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to
Datasheet: FDS6990AS
Test Report: Available
Samples: Available

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Specification	Value
Continuous Drain Current (ID)	7.5 A
Drain to Source Breakdown Voltage	30 V
Drain to Source Resistance	22 mΩ
Drain to Source Voltage (Vdss)	30 V
Dual Supply Voltage	30 V
Element Configuration	Dual
Fall Time	8 ns
Gate to Source Voltage (Vgs)	20 V
Input Capacitance	550 pF
Max Junction Temperature (Tj)	150 °C
Max Operating Temperature	150 °C
Max Power Dissipation	2 W
Min Breakdown Voltage	30 V
Min Operating Temperature	-55 °C
Nominal Vgs	1.7 V
Number of Channels	2
Number of Elements	2
Power Dissipation	2 W
Rds On Max	22 mΩ
Resistance	22 mΩ
Rise Time	8 ns
Schedule B	8541290080, 8541290080\|8541290080\|8541290080\|8541290080\|8541290080
Termination	SMD/SMT
Threshold Voltage	1.7 V
Turn-Off Delay Time	24 ns
Turn-On Delay Time	8 ns
Case/Package	SOIC
Mount	Surface Mount
Number of Pins	8
Number of Terminals	8
Weight	187 mg
Height	1.75 mm
Length	5 mm
Width	4 mm